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Effective uniaxial dielectric function tensor and optical phonons in-plane-oriented 𝛽-Ga2O3 films with equally distributed sixfold-rotation domains

Mock, Alyssa; Richter, Steffen; Papamichail, Alexis; Stanishev, Vallery; Ghezellou, Misagh; Ul-Hassan, Jawad; Popp, Andreas; Anooz, Saud Bin; Gogova, Daniella; Ranga, Praneeth; et al (August 2024, Physical Review Applied)

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Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence

https://doi.org/10.1038/s41563-021-01148-3

Babin, Charles; Stöhr, Rainer; Morioka, Naoya; Linkewitz, Tobias; Steidl, Timo; Wörnle, Raphael; Liu, Di; Hesselmeier, Erik; Vorobyov, Vadim; Denisenko, Andrej; et al (January 2022, Nature Materials)

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Developing silicon carbide for quantum spintronics

https://doi.org/10.1063/5.0004454

Son, Nguyen T.; Anderson, Christopher P.; Bourassa, Alexandre; Miao, Kevin C.; Babin, Charles; Widmann, Matthias; Niethammer, Matthias; Ul Hassan, Jawad; Morioka, Naoya; Ivanov, Ivan G.; et al (May 2020, Applied Physics Letters)

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Electrical and optical control of single spins integrated in scalable semiconductor devices

https://doi.org/10.1126/science.aax9406

Anderson, Christopher P.; Bourassa, Alexandre; Miao, Kevin C.; Wolfowicz, Gary; Mintun, Peter J.; Crook, Alexander L.; Abe, Hiroshi; Ul Hassan, Jawad; Son, Nguyen T.; Ohshima, Takeshi; et al (December 2019, Science)

Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we integrated highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricated diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge-state control and broad Stark-shift tuning exceeding 850 gigahertz. We show that charge depletion results in a narrowing of the optical linewidths by more than 50-fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while using classical semiconductor devices to control scalable, spin-based quantum systems.
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Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface

https://doi.org/10.1103/PhysRevX.7.021046

Christle, David J.; Klimov, Paul V.; de las Casas, Charles F.; Szász, Krisztián; Ivády, Viktor; Jokubavicius, Valdas; Ul Hassan, Jawad; Syväjärvi, Mikael; Koehl, William F.; Ohshima, Takeshi; et al (June 2017, Physical Review X)

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